Method for detecting end-point of chemical mechanical...

Details Method for detecting end-point of chemical mechanical... Method for detecting end-point of chemical mechanical...

2007-04-03

2007-04-03

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S701000, C438S693000, C216S066000, C216S085000, C216S059000, C216S060000, C216S089000, C216S084000

Reexamination Certificate

active

10876686

ABSTRACT:
Disclosed is a method for detecting an end-point of a CMP process of a semiconductor device. More specifically, when all polishing processes are performed using a nitride film as a polishing barrier film, a buffer layer including nitrogen is formed on the nitride film and a polishing process is performed. Then, the concentration of NO from ammonia gas generated from the buffer layer is detected so that the nitride film may be polished to a desired target without damage of the nitride film. As a result, an end-point can be set.

REFERENCES:
patent: 6045605 (2000-04-01), Doi et al.
patent: 6126848 (2000-10-01), Li et al.
patent: 6613683 (2003-09-01), Hwangbo et al.
S.Wolf and R.N.Tauber, Silicon Processing for the VLSI Era, vol. 1, (1986), Lattice Press, pp. 191-195, 184, 546.
S.Wolf, Silicon Processing for the VLSI Era, vol. 4, (2002), Lattice Press, pp. 110, 313, 325, 337, 369, 371, 459, 460.

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