Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-23
2008-10-21
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S133000, C438S381000, C257SE21170, C257SE21051, C257SE21278, C257SE21293, C257SE21645
Reexamination Certificate
active
07439117
ABSTRACT:
A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane and locating a second conductor with its collapsible portion at a predetermined distance above the plane. The method also includes laterally offsetting the first conductor by a predetermined distance from a region of maximum actuation liability. The region of maximum actuation liability is where an attraction force to be applied to activate the device is at a minimum.
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Rottenberg Xavier
Tilmans Hendrikus
Interuniversitair Microelektronica Centrum (IMEC)
McDonnell Boehnen & Hulbert & Berghoff LLP
Nhu David
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