Method for deposition of silicon films from azidosilane sources

Details Method for deposition of silicon films from azidosilane sources Method for deposition of silicon films from azidosilane sources

1990-02-01

1991-05-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

427 51, 148DIG122, H01L 21469

Patent

active

050136909

ABSTRACT:
A low temperature chemical vapor deposition process comprising heating in a chemical vapor depositon reactor a substrate upon which deposition is desired to a temperature of from about 550.degree. C. to about 750.degree. C. in a chemical vapor deposition reactor having a pressure of from about 0.1 torr to approximately atmospheric pressure, introducing into the reactor a silicon-containing feed and optionally an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are hydrogen, azido or C-2 to C-6 alkyl, aryl or C-7 to C-10 aralkyl groups, at least one but not more than three of R.sub.1, R.sub.2, R.sub.3 and R.sub.4, being azido, and maintaining the temperature and pressure to cause a film of silicon nitride, silicon oxynitride or silicon dioxide to deposit is disclosed.

REFERENCES:
patent: 4158717 (1979-06-01), Nelson
patent: 4569855 (1986-02-01), Matsuda et al.
patent: 4963506 (1990-10-01), Liaw et al.

Affiliated with

Also associated with

Rating

Method for deposition of silicon films from azidosilane sources does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for deposition of silicon films from azidosilane sources, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for deposition of silicon films from azidosilane sources will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-939522