Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-06-13
1997-09-02
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438680, 438703, H01L 2128
Patent
active
056630980
ABSTRACT:
A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.
REFERENCES:
patent: 4532702 (1985-08-01), Gigante et al.
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4804560 (1989-02-01), Shioya et al.
patent: 5037775 (1991-08-01), Reisman
patent: 5100501 (1992-03-01), Blumenthal et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5201995 (1993-04-01), Reisman
patent: 5326723 (1994-07-01), Petro et al.
Progress in LPCVD Tungsten for Advanced Microelectronics, Applications Solid State Technology, Nov. 1986, vol. 29, No. 11.
Selective Tungsten on Silicon by the Alternating Cyclic, AC, Hydrogen Reduction of WF.sub.6, The Electrochemical Society, Inc., Feb. 1990, vol. 137, No. 2.
Creighton J. Randall
Dominguez Frank
Johnson A. Wayne
Omstead Thomas R.
Bilodeau Thomas G.
Cone Gregory A.
Dodson Brian
Niebling John
Sandia Corporation
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