Method for depositing silicon nitride films and silicon...

Details Method for depositing silicon nitride films and silicon... Method for depositing silicon nitride films and silicon...

2005-08-30

2005-08-30

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

Reexamination Certificate

active

06936548

ABSTRACT:
A method for producing silicon nitride and silicon oxynitride films by CVD technology, where even at lower temperatures, acceptable film-deposition rates are achieved, without the by-product production of large amounts of ammonium chloride.

REFERENCES:
patent: 5874368 (1999-02-01), Laxman et al.
patent: 5976991 (1999-11-01), Laxman et al.
patent: 0 935 284 (1999-08-01), None
patent: 62 050466 (1987-07-01), None
patent: 02 138471 (1990-05-01), None
patent: 08 022986 (1996-01-01), None
International Search Report for PCT/EP02/13869.

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