Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1998-12-15
2000-08-01
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
H01L 2131
Patent
active
060966610
ABSTRACT:
A method for depositing silicon dioxide on a semiconductor wafer uses plasma enhanced chemical vapor deposition at very low temperatures. The temperature in a silicon dioxide deposition chamber is set to be about 170.degree. C. or less. Silane gas (SiH.sub.4) flows into the silicon dioxide deposition chamber with a flow rate in a range of from about 50 sccm (standard cubic cm per minute) to about 110 sccm. Nitrogen gas (N.sub.2) flows into the silicon dioxide deposition chamber with a flow rate in a range of from about 500 sccm to about 3000 sccm. Nitrous oxide gas (N.sub.2 O) flows into the silicon dioxide deposition chamber with a flow rate in a range of from about 5000 sccm to about 9000 sccm. A high frequency RF signal is applied on a showerhead within the deposition chamber. A low frequency RF signal is applied on a heating block for holding the semiconductor wafer. A predetermined volume for the silicon dioxide deposition chamber is used such that pressure within the silicon dioxide deposition chamber is in a range of from about 0.5 torr to about 1.3 torr. The semiconductor wafer is placed inside the silicon dioxide deposition chamber for a soak time period in a range of from about 30 seconds to about 40 seconds before the high frequency RF signal is applied on the showerhead in the deposition chamber and the low frequency RF signal is applied on the heating block. When the semiconductor wafer reaches the deposition temperature, the high frequency RF signal and the low frequency RF signal are applied for deposition of the silicon dioxide layer onto the semiconductor wafer. By using low temperatures during the deposition of the silicon dioxide layer, the structural integrity of any structure already on the semiconductor wafer is advantageously preserved.
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S. M. Akhter, B. Y. Majlis, S. Shaari. The Study of the Effects of Substrate Temperature on the PECVD SiO2 Layer Using IPL 200E/D System. ICSE '96 Proc., Nov. 1996, Penang, Malaysia. pp. 293-296.
Kitson Terri Jo
Ngo Minh Van
Nguyen Khanh
Advanced Micro Devices , Inc.
Chaudhuri Olik
Choi Monica H.
Peralta Ginette
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