Method for depositing ozone/TEOS silicon oxide films of reduced

Details Method for depositing ozone/TEOS silicon oxide films of reduced Method for depositing ozone/TEOS silicon oxide films of reduced

1992-08-17

1993-12-21

King, Roy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, 4272553, 4272552, 4272551, 427255, 4272557, 4274193, B05D 306, C23C 1600

Patent

active

052719723

ABSTRACT:
A method of depositing good quality thermal CVD silicon oxide layers over a PECVD TEOS/oxygen silicon oxide layer comprising forming an interstitial layer by ramping down the power in the last few seconds of the PECVD deposition.

REFERENCES:
patent: 4872947 (1989-10-01), Wang et al.
patent: 4987005 (1991-01-01), Suzuki et al.
Fujino et al., J. Electrochem. Soc. vol. 138, No. 2 Feb. 1991 pp. 550-553.

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