Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-04-02
1999-02-16
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438788, 427563, 427568, 427579, H01L 21316
Patent
active
058720650
ABSTRACT:
An Si--O--F insulating film having a low dielectric constant is deposited on a substrate by thermally reacting disassociated SiF.sub.4 radicals and ozone or oxygen gas in a vacuum chamber. The SiF.sub.4 radicals are formed remotely from the chamber and interact thermally with the ozone or oxygen without requiring plasma enhancement. The deposited Si--O--F film has good gap-filling properties and is suitable for forming IMD layers over high aspect ratio 0.25 micron geometries.
REFERENCES:
patent: 4300989 (1981-11-01), Chang
patent: 4717586 (1988-01-01), Ishihara et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 5013691 (1991-05-01), Lory et al.
patent: 5156881 (1992-10-01), Okano et al.
patent: 5215787 (1993-06-01), Homma
patent: 5244698 (1993-09-01), Ishihara et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5288518 (1994-02-01), Homma
patent: 5334552 (1994-08-01), Homma
patent: 5385763 (1995-01-01), Okano et al.
patent: 5399529 (1995-03-01), Homma
patent: 5403630 (1995-04-01), Matsui et al.
patent: 5407529 (1995-04-01), Homma
patent: 5413967 (1995-05-01), Matsuda et al.
patent: 5420075 (1995-05-01), Homma et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5753564 (1998-05-01), Fukada
U.S. application No. 08/538696, Verna et al., filed Oct. 2, 1995.
S. Takeisha, et al., "Stabilizing Dielectric Constants Fluorine-Doped-SiO.sub.2 Films by N2O-plasma Annealing," (1995), DUMIC Conference, pp. 257-259.
D. Carl, et al., "The Effect of O.sub.2 :C.sub.2 F.sub.6 Ratios and Low Frequency Power on the Gap Fill Properties and Stability of F-TEOS Films," (1995), DUMIC Conference, pp. 234-240, *abstract*.
N.Hayasaka, et al., "High-Quality and Low Dielectric Constant SiO.sub.2 CVD Using High Density Plasma," (1993), Dry Processing Symposium, pp. 163-168.
K. Musaka, et al., "Single Step Gap Filling Technology for Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O.sub.2 Chemcial Vapor Deposition System," (1993), Conference on Solid State Devices and Materials, pp. 510-512.
D. Yu, et al., "Step Coverage Study of Peteos Deposition for Intermetal Dielectic Applications," (1990), 1990 VMIC Conference, pp. 166-172.
A. M, Hoff and J. Ruzyllo, "Thermal Oxidation of Silicon in an Afterglow Gas," (undated), Ctr. of Elect. Materials and Devices, Penn. State.
T. Fukada and T. Akahori, "Preparation of SiOF Films Low Dielectric Constant by ECR Plasma CVD," (1995), DUMIC Conference, pp. 43-49.
L. Q. Qian, et al., "High Density Plasma Deposition and Deep Submicron Gap Fill with Low Dielectric Constant SiOF Films," (1995), DUMIC Conference, pp. 50-56.
T. Matsuda, et al., "Dual Frequency Plasma CVD Fluorosilicate Glass Deposition for 0.25 .mu.m Interlevel Dielectrics," (1995), DUMIC Conference, pp. 22-28.
R. K. Laxman, "Low .epsilon. Dielectrics: CVD Fluorinated Silicon Dioxides," (1995), Semiconductor International, pp. 71-74.
D. A. Webb, "Silicon Dioxide Films Produced by PECVD of TEOS and TMCTS," (1989), ULSI Science and Technology--Symposium on Ultra Large Scale Integration Science Technology, pp. 571-585.
M. J. Shapiro, et al., "Dual Frequency Plasma CVD Fluorosilicate Glass Water Absorption and Stability ," (1995), DUMIC Conference, pp. 118-123.
D. Yu, et al., "Step Coverage Study of Peteos Deposition for Intermetal Dielectric Applications," (1990), IEEE VLSI Multilevel Interconnection Conference, pp. 165-172.
Applied Materials Inc.
Bowers Jr. Charles L.
Whipple Matthew
LandOfFree
Method for depositing low K SI-O-F films using SIF.sub.4 /oxygen does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for depositing low K SI-O-F films using SIF.sub.4 /oxygen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing low K SI-O-F films using SIF.sub.4 /oxygen will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2062362