Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1998-04-07
2000-11-21
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427539, 42725537, 4272557, H05H 124, C23C 1640
Patent
active
061499870
ABSTRACT:
A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
REFERENCES:
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 4992306 (1991-02-01), Hochberg et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5426076 (1995-06-01), Moghadam
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5484749 (1996-01-01), Maeda et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5494858 (1996-02-01), Gnade et al.
patent: 5504042 (1996-04-01), Cho et al.
patent: 5525551 (1996-06-01), Ohta
patent: 5536681 (1996-07-01), Jang et al.
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5561318 (1996-10-01), Gnade et al.
patent: 5571576 (1996-11-01), Qian et al.
patent: 5660895 (1997-08-01), Lee et al.
patent: 5668398 (1997-09-01), Havemann et al.
patent: 5753564 (1998-05-01), Fukada
patent: 5789819 (1998-08-01), Gnade et al.
F. Gaillard et al., "Silicon Dioxide Chemical Vapor Deposition Using Silane and Hydrogen Peroxide," J. Vac. Sci. Technol. B., vol. 14, No. 4, No. 4, pp. 2767-2769 (Jul./Aug. 1996).
S. Mokhtari et al., "Mechanisms of Deposition of SiO.sub.2 from TEOS and Related Organosilicon Compounds and Ozone," J. Electrochem. Soc., vol. 142, No. 7, pp. 2332-2340 (Jul. 1995).
K. Kwok et al., "Surface Related Phenomena in Integrated PECVD/Ozone-TEOS SACVD Processes for Sub-Half Micron Gap Fill: Electrostatic Effects," J. Electrochem. Soc., vol. 141, No. 8, pp. 2172-2177 (Aug. 1994).
J.G. Lee et al., "SACVD: A New Approach for 16Mb Dielectrics," Semiconductor International, pp. 116-120 (May 1992).
K. Kishimoto et al., "Planarized SiO.sub.2 Interlayer Formed by Two Step O.sub.3 /TEOS APCVD and Low Temperature Annealing," Proceedings of the International VLSI Multilevel Interconnection Conference, VMIC Conference, Santa Clara, CA--Jun. 9-10, 1992, pp. 149-155.
K. Fujino et al., "Surface Modification of Base Materials for TEOS/O.sub.3 Atmospheric Pressure Chemical Vapor Deposition," J. Electrochem. Soc., vol. 139, No. 6, pp. 1690-1692 (Jun. 1992).
N. Sato et al., "Improvement of Gap-Filling Property of O.sub.3 -tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment," Jpn. J. Appl. Phys., vol. 32, part 2, No. 1A/B, pp. 110-112 (1993).
M. Saito et al., "Pressure-Controlled Two-Step TEOS-O.sub.3 CVD Eliminating the Base Material Effect," 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 43-44 (1995).
K. Fujino et al., "Dependence of Deposition Characteristics on Base Materials in TEOS and Ozone CVD at Atmospheric Pressure," J. Electrochem. Soc., vol. 138, No. 2, pp. 550-554 (Feb. 1991).
Deacon Thomas E.
Lee Peter Wai-Man
Perng Dung-Ching
Applied Materials Inc.
King Roy V.
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