Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-03-09
2009-11-10
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S758000, C438S680000, C438S785000, C438S786000, C257S632000, C257SE21267, C257SE21268, C257SE21302
Reexamination Certificate
active
07615500
ABSTRACT:
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.
REFERENCES:
patent: 2006/0045969 (2006-03-01), Yamamoto et al.
patent: 2001-35842 (2001-02-01), None
Takano Kensuke
Watanabe Koji
Yamamoto Ichiro
Kolahdouzan Hajar
McGinn IP Law Group PLLC
Monbleau Davienne
NEC Corporation
NEC Electronics Corporation
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