Method for depositing film and method for manufacturing...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C438S758000, C438S680000, C438S785000, C438S786000, C257S632000, C257SE21267, C257SE21268, C257SE21302

Reexamination Certificate

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07615500

ABSTRACT:
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.

REFERENCES:
patent: 2006/0045969 (2006-03-01), Yamamoto et al.
patent: 2001-35842 (2001-02-01), None

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