Method for depositing a metal layer on a semiconductor...

Details Method for depositing a metal layer on a semiconductor... Method for depositing a metal layer on a semiconductor...

2005-09-27

2005-09-27

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000

Reexamination Certificate

active

06949461

ABSTRACT:
Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a dielectric layer. The dielectric layer is patterned so as to expose the metal conductor. A liner layer is then deposited into the pattern. The liner layer is then argon sputter etched to remove the liner layer and expose the metal conductor. In the process of argon sputter etching, the liner layer is redeposited onto the sidewall of the pattern. Lastly, an additional layer is deposited into the pattern and covers the redeposited liner layer.

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