Method for depositing a layer on a substrate wafer with a sputte

Details Method for depositing a layer on a substrate wafer with a sputte Method for depositing a layer on a substrate wafer with a sputte

1994-07-11

1996-04-09

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429811, C23C 1434

Patent

active

055058337

ABSTRACT:
A method for depositing a layer on a substrate is disclosed wherein a collimator having cylindrical holes is employed to reduce the lateral component of a particle flux. The cylindrical holes are aligned to be perpendicular to a substrate wafer and have a variety of radii such that the hole radii are smaller in regions having a higher vertical component of particle flux than in regions which have a lower vertical component of the particle flux.

REFERENCES:
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4988424 (1991-01-01), Woodward et al.
patent: 5223108 (1993-06-01), Hurwitt
patent: 5380414 (1995-01-01), Tepman
patent: 5415753 (1995-05-01), Hurwitt et al.
Article "Sputtering Tools: Still on Target?", Semiconductor International, Aug. 1992 at 43.
Technical Paper "Modeling of a Sputter Reactor Using the Direct Simulation Monte Carlo Method" IEDM 1992 at San Francisco, Paper No. 76.
Japanese Patent Abstract JP62-077477 A, Sep. 4, 1987, vol. 11, No. 273.
Japanese Patent Abstract JP62-250171, Apr. 22, 1988, vol. 12, No. 132.
Japanese Patent Abstract JP63-310965 A, Apr. 14, 1989, vol. 13, No. 156.
Japanese Patent Abstract JP02-115365 A, Jul. 12, 1990, vol. 14, No. 326.

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