Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-18
2005-10-18
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S947000
Reexamination Certificate
active
06955961
ABSTRACT:
A method for defining a minimum pitch in an integrated circuit beyond photolithographic resolution controls the defined pitches of the target layer by use of polymer spacer, photo-insensitive polymer plug and polymer mask during the process, so as to achieve the minimum pitch of the target layer beyond photolithographic resolution. Applied to memory manufacture, this method is capable of simultaneously overcoming the process difficulty of significant difference between polysilicon pitches in memory array region and periphery region.
REFERENCES:
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 5595941 (1997-01-01), Okamoto et al.
patent: 5618383 (1997-04-01), Randall
patent: 6835662 (2004-12-01), Erhardt et al.
Chaudhari Chandra
Macronix International Co. Ltd.
Rabin & Berdo P.C.
LandOfFree
Method for defining a minimum pitch in an integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for defining a minimum pitch in an integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for defining a minimum pitch in an integrated circuit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3479473