Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-09-30
2000-12-05
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438529, 438592, H01C 21336
Patent
active
061566152
ABSTRACT:
A semiconductor device and method of forming contacts for the semiconductor device performs a retrograde implant of dopant in the source/drain regions so that the concentration of the dopant within these regions is highest at a predetermined depth below the top surface of the substrate. This depth is made to coincide with the bottom surfaces of the silicide contacts at the source/drain regions. Since the bottom of the silicide contacts are located at the region of greatest doping concentration within the source/drain junctions, the contact resistance is maintained relatively low while the sheet resistance may be made lower by increasing the thickness of the silicide contacts.
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Advanced Micro Devices , Inc.
Booth Richard
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