Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-06-28
2005-06-28
Zarneke, David A. (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Reexamination Certificate
active
06911401
ABSTRACT:
A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films generated using the flow rates; receiving a desired concentration profile of the species within a desired film; and generating a plurality of process steps that, when performed, would form the desired film with the desired concentration profile by controlling the flow rate of the species based, in part, on the first information and the desired concentration profile, wherein a first concentration of the species at a first point in the desired concentration profile differs from a second concentration of the species at a second point in the desired concentration profile. A computer-readable medium, system and apparatus are also disclosed.
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Diniz Herman P.
Fulmer Christopher T.
Khandan Shahab
Samoilov Arkadii V.
Scudder Lance A.
Applied Materials Inc.
Blakely & Sokoloff, Taylor & Zafman
Zarneke David A.
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