Method for curing a porous low dielectric constant...

Details Method for curing a porous low dielectric constant... Method for curing a porous low dielectric constant...

2008-03-06

2010-12-28

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07858533

ABSTRACT:
A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

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