Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-02-17
1999-09-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438634, 438675, H01L 218242
Patent
active
059565870
ABSTRACT:
A crown capacitor for a memory device is formed using (1) an important early poly plug 42 process and (2) an etch barrier layer 34. A first insulating layer 30 and an etch barrier layer are formed over device structures and the substrate 10. A node contact hole 40 is formed through the etch barrier layer 34 and the first insulating layer 30. A plug 42 is formed filling the node contact hole 40. Next, a planarizing layer 44 is formed over the etch barrier layer 34 and the plug 42. A crown hole 46 is formed in the planarizing layer 44 exposing the plug 42. A first polysilicon layer 50 is deposited over the etch barrier layer, the plug 42, and the remaining first planarizing layer 44A. A Sacrificial layer 54 is formed over the first polysilicon layer 50 thereby filling the crown hole 46. The sacrificial layer 54 and the first polysilicon layer 50 are etch back to remove the exposed portions of the first polysilicon layer 50 over the planarizing layer 44A. The sacrificial layer 54 is selectively removed thereby forming a crown shaped storage electrode 42 50.
REFERENCES:
patent: 5491103 (1996-02-01), Ahn et al.
patent: 5543345 (1996-08-01), Liaw et al.
patent: 5545584 (1996-08-01), Wuu et al.
patent: 5550076 (1996-08-01), Chen
patent: 5604146 (1997-02-01), Tseng
patent: 5766995 (1998-06-01), Wu
patent: 5851875 (1998-12-01), Ping
Chen Li Yeat
Liaw Ing-Ruey
Ackerman Stephen B.
Chaudhari Chandra
Saile George O.
Stoffel William J.
Vanguard International Semiconductor Corporation
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