Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-20
2005-09-20
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S224000, C438S419000, C438S420000, C438S527000, C438S942000, C257SE21330, C257SE21258, C257SE21644, C148SDIG001
Reexamination Certificate
active
06946339
ABSTRACT:
In a method for creating a stepped structure on a substrate, which at least includes a first portion with a first thickness and a second portion with a second thickness, at first a layer sequence of a first oxide layer, a first nitride layer, and a second oxide layer is applied onto the substrate. Then a portion of the second oxide layer and a portion of the first nitride layer are removed to expose a portion of the first oxide layer. Then a part of the first nitride layer is removed to establish the first region of the stepped structure. Then the thickness of the first oxide layer is changed at least in the established first region to establish the first thickness of this region. Subsequently, a further part of the first nitride layer is removed to establish a second region of the stepped structure.
REFERENCES:
patent: 4282648 (1981-08-01), Yu et al.
patent: 4803179 (1989-02-01), Neppl et al.
patent: 4868136 (1989-09-01), Ravaglia
patent: 5104829 (1992-04-01), Shida
patent: 5254489 (1993-10-01), Nakata
patent: 5362670 (1994-11-01), Iguchi et al.
patent: 5432114 (1995-07-01), O
patent: 5502009 (1996-03-01), Lin
patent: 5554554 (1996-09-01), Bastani et al.
patent: 5576226 (1996-11-01), Hwang
patent: 5580807 (1996-12-01), Sery et al.
patent: 5801416 (1998-09-01), Choi et al.
patent: 5943566 (1999-08-01), Wang
patent: 6025234 (2000-02-01), Chou
patent: 6150220 (2000-11-01), Huh et al.
patent: 6184083 (2001-02-01), Tsunashima et al.
patent: 31 10 477 (1990-05-01), None
patent: 0 399 527 (1990-05-01), None
English Translation of Abstract for Japanese Publication No. 02087675, Mar. 28, 1990.
Infineon - Technologies AG
Maginot Moore & Beck
Pham Long
Rao Shrinivas H.
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