Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-21
2006-11-21
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S180000, C438S231000
Reexamination Certificate
active
07138313
ABSTRACT:
A method of forming a self-aligned SOI diode, the method comprising depositing a protective structure over a substrate; implanting a plurality of diffusion regions of variable dopant types in an area between at least one pair of isolation regions in the substrate, the plurality of diffusion regions separated by a diode junction, wherein the implanting aligns an upper surface of the diode junction with the protective structure; and removing the protective structure. The method further comprises forming a silicide layer over the diffusion regions and aligned with the protective structure. The protective structure comprises a hard mask, wherein the hard mask comprises a silicon nitride layer. Alternatively, the protective structure comprises a polysilicon gate and insulating spacers on opposite sides of the gate. Furthermore, in the removing step, the spacers remain on the substrate.
REFERENCES:
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5811857 (1998-09-01), Assaderaghi et al.
patent: 6232163 (2001-05-01), Voldman et al.
patent: 6245600 (2001-06-01), Geissler et al.
patent: 6294412 (2001-09-01), Krivokapic
patent: 6576958 (2003-06-01), Ker et al.
patent: 6589823 (2003-07-01), Beebe et al.
patent: 6590264 (2003-07-01), Ker et al.
patent: 6936895 (2005-08-01), Manna et al.
patent: 2002/0119608 (2002-08-01), Ko et al.
patent: 2003/0080386 (2003-05-01), Ker et al.
Chatty Kiran V.
Gauthier Jr. Robert J.
Muhammad Mujahid
Putnam Christopher S.
Canale Anthony
Gibb I.P. Law Firm LLC
Pham Thanhha S.
LandOfFree
Method for creating a self-aligned SOI diode by removing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for creating a self-aligned SOI diode by removing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for creating a self-aligned SOI diode by removing a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3656961