Method for creating a pattern having step features in a photopol

Details Method for creating a pattern having step features in a photopol Method for creating a pattern having step features in a photopol

1995-07-06

1997-12-02

Lesmes, George F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430327, 430330, 430394, 430396, 430944, 430349, G03C 516, G03C 504

Patent

active

056934556

ABSTRACT:
A stepped pattern is formed in a photoresist film (10) by heating the photoresist at a first temperature to soft bake it, and then applying a mask (10) that allows only a selected portion (15) of the photoresist to be heated. That portion of the photoresist film is then heated at a temperature sufficient to partially degrade the photoresist, and the mask is removed. Another portion (22) of the photoresist film is then exposed to ultraviolet light to degrade it more fully than in the earlier step. The photoresist film is then developed under conditions sufficient to completely remove the portion exposed to ultraviolet light, and to partially remove the portion heated using the mask, thereby creating a stepped feature in the photoresist film.

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patent: 5403695 (1995-04-01), Hayase et al.

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