Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-06
1999-12-07
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438246, 438247, 438249, 438386, 438389, 438392, 438558, 438618, H01L 218242, H01L 2122, H01L 214763
Patent
active
059982543
ABSTRACT:
The method sequence results in a conductive connection between two zones of a first conductivity type. In particular, one of the zones is a source/drain zone of a transistor. Instead of the conventional additional nitride layer, the connection is produced by implanting directly into the third insulation layer, which is present anyway, and by utilizing the fact that the third insulation layer forms the lateral spacers on the gatestack disposed on the region of the second conductivity type.
REFERENCES:
patent: 5185294 (1993-02-01), Lam et al.
patent: 5545581 (1996-08-01), Armacost
Bowers Charles
Greenberg Laurence A.
Lerner Herbert L.
Pham Thanhha
Siemens Aktiengesellschaft
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