Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-04-30
2010-02-23
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07669153
ABSTRACT:
A method for correcting a photomask pattern is provided. The correcting method performs a verification of a focus-exposure matrix (FEM) and an overlay variation on a layout area having contact holes or vias in a layout pattern so as to generate a hint information. The layout pattern of the photomask is corrected according to the hint information to prevent the contact holes or vias from being exposed in arrangement to corresponding metal layer, poly layer, or diffusion layer.
REFERENCES:
patent: 6961920 (2005-11-01), Zach
patent: 2002/0098427 (2002-07-01), Chen et al.
patent: 2006/0161452 (2006-07-01), Hess
Huang Chia-Wei
Huang Sheng-Yuan
Tsai Pei-Ru
Wu Te-Hung
Yang Chuen-Huei
Do Thuan
Hsu Winston
United Microelectronics Corp.
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