Method for controlling trench depth in shallow trench...

Details Method for controlling trench depth in shallow trench... Method for controlling trench depth in shallow trench...

2006-08-08

2006-08-08

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S008000, C438S016000, C438S700000, C438S714000, C438S736000, C216S059000

Reexamination Certificate

active

07087498

ABSTRACT:
A method for forming a trench in a semiconductor silicon substrate. An anti-reflective coating layer and a photoresist layer are formed over the substrate and patterned in accordance with a location for the trench. During the trench etch into the silicon substrate, the etch environment is monitored to detect the material of the anti-reflective coating layer. The etch process is controlled in response to detecting the removal of this material and the known etch rate differential between the anti-reflective coating material layer and the silicon substrate.

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