Method for controlling thickness distribution of a film

Details Method for controlling thickness distribution of a film Method for controlling thickness distribution of a film

2006-09-05

2010-06-15

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S769000, C438S770000, C257SE21271, C257SE21278, C257SE21282

Reexamination Certificate

active

07737048

ABSTRACT:
A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

REFERENCES:
patent: 6495805 (2002-12-01), Sakamoto et al.
patent: 2002/0001788 (2002-01-01), Sakamoto et al.
patent: 2003/0100194 (2003-05-01), Nakamura
patent: 2003-86713 (2003-03-01), None
patent: 2003-163212 (2003-06-01), None
patent: 2002-373984 (2005-12-01), None
Japanese Patent Office issued a Japanese Office Action dated Jan. 14, 2010, Application No. 2005-257361.

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