Method for controlling the top width of a trench

Details Method for controlling the top width of a trench Method for controlling the top width of a trench

2006-09-12

2006-09-12

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000

Reexamination Certificate

active

07105416

ABSTRACT:
A method for controlling the top width of a trench. A conductive layer is formed on the trench over the substrate, forming an interlayer over a part thereof, above the conductive layer. A sacrifice layer is formed on the trench sidewall above the interlayer, and the interlayer is removed to expose the trench sidewall above the conductive layer and the sacrifice layer, such that the exposed trench sidewalls are oxidized. Thus, the sacrifice layer on the trench sidewall reduces the top width of the trench. In the oxidization process, silicon oxide is formed on the sacrifice layer and the exposed trench sidewall, such that upper width of the trench will is not increased during subsequent wet etching.

REFERENCES:
patent: 6605504 (2003-08-01), JaiPrakash et al.

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