Method for controlling the morphology of deposited silicon on a

Details Method for controlling the morphology of deposited silicon on a Method for controlling the morphology of deposited silicon on a

1998-05-04

2000-11-07

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

438528, 438798, H01L 21265

Patent

active

061436313

ABSTRACT:
A method for controlling the morphology of deposited silicon on a layer of silicon dioxide and semiconductor devices incorporating such deposited silicon are provided. The method comprises the steps of: providing a layer of silicon dioxide; implanting hydrogen ions into the layer of silicon dioxide by plasma source ion implantation; and forming a layer of polycrystalline silicon on the layer of silicon dioxide.

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