Method for controlling the etching profile of a layer of an inte

Details Method for controlling the etching profile of a layer of an inte Method for controlling the etching profile of a layer of an inte

1992-08-05

1995-01-03

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437229, 437187, 437225, 156664, 156665, H01L 21306

Patent

active

053783093

ABSTRACT:
The invention concerns a process for slope etching a layer of an integrated circuit. The layer to be etched is coated with a masking photoresist layer. The process consists of jointly performing a passivation of the etching flank of the layer to be etched and a nonisotropic erosion of the masking photoresist layer, which makes it possible to control the slope of the etching flank of the layer to be etched.

REFERENCES:
patent: 4436584 (1984-03-01), Bernacki et al.
patent: 4678540 (1987-07-01), Uchimura
S. Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach Calif., 1986, pp. 551-555.
Oda et al., "Undercutting Phenomena in Al Plasma Etching", Japanese Journal of Applied Physics, vol. 19, No. 7, Jul. 1980 pp. 405-408.
Proceedings of the 3rd Int., IEEE VLSI Multilevel Interconnection Conf., 9-10 Jun. 1986, Santa Clara, Calif., USA, pp. 198-204; Abraham: "Sidewall Tapering of Plasma Etched . . . ".
Japanese Journal of Applied Physics, Part 2, vol. 28, No. 6. Tokyo Japan, Jun. 1989, pp. L1070-L1072, Ohno et al., "Reactive Ion Etching of Copper Films in SiCl4 and N2 . . . ".
Proceedings of the SPIE, vol. 923, Electron-Beam, X-Ray and Ion-Beam Technology, . . . 2-4 Mars 1988, Santa Clara, Calif., US, pp. 55-62, Zwicker et al., "Fabrication . . . :".
Journal of the Electrochemical Society, vol. 137, No. 6, Jun. 1990, Manchester, N.H., USA, pp. 1907-1911; KUO: "Factors affecting the Molybdenum line slope by . . . ".

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