Method for controlling polishing process

Details Method for controlling polishing process Method for controlling polishing process

2005-12-15

2008-10-07

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S687000, C438S691000, C438S692000, C438S723000, C438S724000, C438S745000, C216S079000, C216S088000, C216S089000

Reexamination Certificate

active

07432205

ABSTRACT:
The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.

REFERENCES:
patent: 6251786 (2001-06-01), Zhou et al.
patent: 6387807 (2002-05-01), Faubert et al.
patent: 6514863 (2003-02-01), He
patent: 6620276 (2003-09-01), Kuntze et al.
patent: 2006/0211157 (2006-09-01), Smith et al.
patent: 1670924 (2005-09-01), None

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