Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-09-10
1999-10-05
Baxter, Janet
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430313, 430317, 216 41, 216 72, 438713, 438738, G03F 700
Patent
active
059621958
ABSTRACT:
A method for forming a patterned target layer within an integrated circuit. The method employs a plasma pre-treatment of a patterned photoresist layer employed in patterning a blanket focusing which in turn is employed in patterning the patterned target layer from a blanket target layer. The plasma pre-treatment employs a plasma pre-treatment composition comprising carbon tetrafluoride and argon without oxygen. After the plasma pre-treatment, the blanket focusing layer is etched with a reproducible negative etch bias in a plasma etch method employing an etchant gas composition comprising carbon tetrafluoride and argon without oxygen. Through the method there may be formed patterned target layers, with enhanced uniformity, of linewidth dimension as narrow as about of 0.25 microns while employing near ultra-violet (NUV) (ie: 365 nm) photoexposure methods.
REFERENCES:
patent: Re30505 (1981-02-01), Jacob
patent: 3920483 (1975-11-01), Johnson, Jr. et al.
patent: 4253888 (1981-03-01), Kikuchi
patent: 5139904 (1992-08-01), Auda et al.
patent: 5308742 (1994-05-01), Ta
patent: 5326727 (1994-07-01), Kook et al.
patent: 5368989 (1994-11-01), Flaim et al.
patent: 5407787 (1995-04-01), McElhanon et al.
patent: 5656128 (1997-08-01), Hashimoto et al.
patent: 5733714 (1998-03-01), McCulloch et al.
patent: 5753418 (1998-05-01), Tsai et al.
patent: 5773199 (1998-06-01), Linliu et al.
S. Wolf et al, "Silicon Processing For The VLSI Era" vol. 1, Lattice Press, Sunset Beach, CA, 1986, p. 581.
Jeng Erik S.
Yen Tzu-Shih
Ackerman Stephen B.
Baxter Janet
Holloman Jill N.
Saile George O.
Szecsy Alek P.
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