Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-01-22
1999-09-21
Breneman, Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438 14, 216 59, H01L 2100
Patent
active
059553839
ABSTRACT:
A method and apparatus to improve process control during plasma etching of semiconductor substrates. Improvements are directed towards controlling the rate of etching when using consumable electrodes. Consumable electrode materials are used to increase selectivity in certain plasma etching processes as in via. contact. or in SOG etch. A consumable electrode material has a significant effect on processing time due to changing gap dimension between electrodes. This invention teaches how to adjust for process variables by using feedback from two strategically placed pressure manometers.
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Ackerman Stephen B.
Alejandro Luz
Breneman Bruce
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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