Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2005-01-14
2010-06-01
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S514000, C438S937000, C257SE31017, C257SE33002
Reexamination Certificate
active
07727865
ABSTRACT:
To provide a method of controlling a conductivity of a Ga2O3system single crystal with which a conductive property of a β-Ga2O3system single crystal can be efficiently controlled.The light emitting element includes an n-type β-Ga2O3substrate, and an n-type β-AlGaO3cladding layer, an active layer, a p-type β-AlGaO3cladding layer and a p-type β-Ga2O3contact layer which are formed in order on the n-type β-Ga2O3substrate. A resistivity is controlled to fall within the range of 2.0×10−3to 8×102Ωcm and a carrier concentration is controlled to fall within the range of 5.5×1015to 2.0×1019/cm3by changing a Si concentration within the range of 1×10−5to 1 mol %.
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Harwig et al., “Electrical Properties of b-Ga2O3 Single Crystals. II,” Journal of Solid State Chemistry vol. 23, pp. 205-211, Jan. 15, 1978. (Previously Submitted).
Ueda, N. et al., “Synthesis and Control of Conductivity of Ultraviolet Transmitting B-Ga2O3 Single Crystals”, in Applied Physics Letters, Jun. 30, 1997, vol. 70, Issue 26, pp. 3561 to 3563. (Previously Submitted).
Tomm, Y. et al., “Floating Zone Growth of B-Ga203: A New Window Material for Optoelectronic Device Applications”, In: Solar Energy Materials & Solar Cells, Feb. 2001, vol. 66, pp. 369 to 374. (Previously Submitted).
Frank J. et al., “electrical Doping of Gas-Sensitive , Semiconducting Ga203 Thin Films”, In: Sensors and Actuators B: Chemical, Aug. 1996, Vol. 34, pp. 373 to 377. (Previously Submitted).
Harwig, T. et al., “Electrical Properties of B-Ga2O3 Single Crystals. II”, In: Journal of Solid State Chemistry, Jan. 15, 1978, vol. 23, pp. 205 to 211. (Previously Submitted).
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Japanese Office Action dated Dec. 2, 2008 with English Tranlsation.
Harwig T. et al., “Electrical Properties of B-Ga203 Single Crystals.”, Solid State Communications, 1976, vol. 18, pp. 1223- 1225. (Previously Submitted).
Ueda, N. et al., “Synthesis and Control of Conductivity of Ultraviolet Transmitting B-Ga203 Single Crystals”, in Applied Physics Letters, Jun. 30, 1997, vol. 70, Issue 26, pp. 3561 to 3563. (Previously Submitted).
Tomm, Y. et al., “Floating Zone Growth of B-Ga203: A New Window Material for Optoelectronic Device Applications”, In: Solar Energy Materials & Solar Cells, Feb., 2001, vol. 66, pp. 369 to 374. (Previously Submitted).
Frank J. et al., “Electrical Doping of Gas-Sensitive , Semiconducting Ga203 Thin Films”, In: Sensors and Actuators B: Chemical, Aug. 1996, vol. 34, pp. 373 to 377. (Previously Submitted).
Japanese Office Action dated Dec. 2, 2009 with English Tranlsation.
Japanese Office Action dated Mar. 24, 2009 with Partial English Translation.
Aoki Kazuo
Garcia Villora Encarnacion Antonia
Ichinose Noboru
Shimamura Kiyoshi
McGinn Intellectual Property Law Group PLLC
Nguyen Ha Tran T
Waseda University
Whalen Daniel
LandOfFree
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