Method for controlling CD during an etch process

Details Method for controlling CD during an etch process Method for controlling CD during an etch process

2006-04-18

2006-04-18

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S067000, C438S005000, C438S008000, C438S009000, C438S714000, C430S313000

Reexamination Certificate

active

07029593

ABSTRACT:
A method for controlling CD of etch process defines difference between designed dimension and etched dimension as dimensional displacement and defines target value of the dimensional displacement. A plurality of samples are prepared in each group having different exposure ratios. The plurality of samples of each group are etched until etch end point is detected and then over-etched for uniform time interval after detecting the etch end point. Using etch end point and over-etch time, correlation function of the over-etch time to the etch end point time is determined and the over-etch time to the etch end point is determined using the correlation function.

REFERENCES:
patent: 6322714 (2001-11-01), Nallan et al.
patent: 6350390 (2002-02-01), Liu et al.
patent: 6727047 (2004-04-01), Montgomery et al.
patent: 199923359 (1999-03-01), None
patent: 20017450 (2001-01-01), None

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