Method for controlling a line dimension arising in photolithogra

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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430330, 356354, 356355, 356357, 356384, G03C 500, G01B 902, G01B 1102

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active

055166083

ABSTRACT:
In a photolithographic process utilizing a wafer coated with a chemically amplified photoresist, a method for controlling a line dimension. The method comprises the steps of measuring at at least two times, and from at least two angles, evolving signals comprising intensities of light diffracted from a portion of an exposed patterned area on the waver, the evolving signals corresponding to vector combinations of time dependent light diffracted from the pattern appearing in the photoresist; and substantially time invariant light diffracted due to any underlying pattern beneath the photoresist; and, combining the measurements mathematically for extracting a contribution due to the pattern evolving in the photoresist.

REFERENCES:
patent: 5124216 (1992-06-01), Giapis et al.
Hickman, Gaspar, Bishop, Nagui, McNeil, Tipton, Stallard, & Draper Use of Diffracted Light from Latent Images to Improve Lithography Control, Proceedings of the International Society for Optical Engineering, Integrated Circuit Metrology, Inspection and Process Control, Mar. 1991 pp. 245-257.
Lamola et al; Chemically Amplified Resists; Solid State Technology, Aug. 1991, pp. 53-58.

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