Method for controlling a collimated sputtering source

Details Method for controlling a collimated sputtering source Method for controlling a collimated sputtering source

1993-09-17

1995-12-26

Breneman, R. Bruce

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429803, 20429811, C23C 1454

Patent

active

054784557

ABSTRACT:
A method for automatically controlling a collimated sputtering source that is controllable by a computer to compensate for the build-up of sputtered material on the collimator. The method involves providing software for the computer including a formula to calculate a multiplier as a function of the age of the collimator, sequentially depositing film on a series of substrates using the sputtering source, monitoring the age of the collimator, and using the software to periodically adjust the value of a controllable sputtering parameter as a function of the multiplier. The sputtering parameter is automatically adjusted by the software such that a property of the film deposited by the source on the series of substrates does not substantially vary among the substrates as sputtered material builds up on the collimator.

REFERENCES:
patent: 4166783 (1979-09-01), Turner
patent: 5126028 (1992-06-01), Hurwitt et al.
patent: 5186594 (1993-02-01), Toshima et al.
patent: 5223108 (1993-06-01), Hurwitt

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