Method for controlled cleaving process

Details Method for controlled cleaving process Method for controlled cleaving process

1999-08-10

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438510, 438800, H01L 2122, H01L 2138

Patent

active

060339748

ABSTRACT:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel

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