Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-05-06
1987-06-09
Bashore, S. Leon
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 156653, 156657, 156662, 20419234, H01L 21308, C23F 102
Patent
active
046718494
ABSTRACT:
A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.
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patent: 4409319 (1983-10-01), Colacino et al.
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patent: 4511430 (1985-04-01), Chen et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 10, 3/1979, _"Gas Mixing to Prevent Polymer Formation During Reaction Ion Etching", Bonder _& Crimi.
IBM Technical Disclosure Bulletin, vol. 20, No. 4, 9/1977, _"Sidewall Tailoring Using Two Different Reactive Ion Etchants in _Succession", Bartush, Colacino, Gati.
Chen Lee
Mathad Gangadhara S.
Bashore S. Leon
International Business Machines - Corporation
Lashmit Douglas A.
Lithgow Thomas M.
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