Semiconductor device with MIS capacitor

Details Semiconductor device with MIS capacitor Semiconductor device with MIS capacitor

1991-04-23

1992-02-18

James, Andrew J.

357 13, 357 14, 357 20, H01L 2702, H01L 2990, H01L 2992

Patent

active

050898752

ABSTRACT:
According to a semiconductor device with a MIS capacitor, an n.sup.+ -type diffusion layer and an n.sup.- -type epitaxial layer are formed on a p-type semiconductor sub-strate. An n-type diffusion layer and a p-type well region are formed in the n.sup.- -type epitaxial layer. Emitter diffusion layers are formed in the well region with a predetermined distance from each other. An insulating film is formed on the resultant structure, excluding at least portions of the n-type diffusion layer and the emitter diffusion layers. Further, a metal-side electrode, a diffusion-region-side led-out electrode, and emitter electrodes are formed on the resultant structure. The metal-side electrode and the emitter electrode are connected by means of a metal wire, and the led-out electrode and the emitter electrode are connected by means of a metal wire.

REFERENCES:
patent: 3469155 (1969-09-01), Beek
patent: 4651178 (1987-03-01), Avery
patent: 4688323 (1987-08-01), Yoshida et al.
patent: 4758873 (1988-07-01), Monticelli

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