Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-06-07
1999-01-12
Dutton, Brian
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438773, 438774, H01L 21336, H01L 2131, H01L 21469
Patent
active
058588442
ABSTRACT:
The present invention comprises an innovative gate oxidation process after the disposition of the gate and prior to the disposition of the source and the drain by exposing the gate to oxygen at a predetermined temperature and for a predetermined time period for the optimized transistor performance. During the innovative gate oxidation process, oxygen penetrates into the interfaces of the gate conductive layer gate oxide and the gate dielectric layer silicon substrate and oxidizes portions of the gate conductive layer at the interfaces due to the oxygen smiling or the bird beak effect, which results in an increased effective thickness of the gate dielectric layer. Optionally, HCl can be introduced at a predetermined flowrate during the innovative gate oxidation process. A particular embodiment of the present invention is the fabrication of MOS transistors with polysilicon as the gate conductive layer and silicon oxide as the gate dielectric layer, and with the source and drain fabricated by the low doped drain (LDD) implant. In this particular case, the innovative gate oxidation process is a polysilicon oxidation (POX) process grown before LDD implant. The oxidation temperature and oxidation time duration for optimized transistor performances have been found to be 850.degree. C. and 115 minutes, respectively. This present invention is utilized to achieve maximum speed and performance by optimizing the POX process.
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Fang Hao
Lukanc Todd
Omid-Zehoor Farrokh
Schmidt Chris
Advanced Micro Devices , Inc.
Dutton Brian
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