Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-12-21
2008-10-28
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S676000
Reexamination Certificate
active
07442634
ABSTRACT:
According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.
REFERENCES:
patent: 5972192 (1999-10-01), Dubin et al.
patent: 6667229 (2003-12-01), Lin et al.
patent: 7128823 (2006-10-01), Yang et al.
patent: 2003/0159941 (2003-08-01), Bajaj et al.
patent: 2003/0168343 (2003-09-01), Commander et al.
patent: 2004/0023481 (2004-02-01), Desai et al.
patent: 2004/0154926 (2004-08-01), Sun et al.
patent: 2004/0187731 (2004-09-01), Wang et al.
patent: 2004/0217008 (2004-11-01), Tsuchida et al.
patent: 1 069 211 (2001-01-01), None
patent: PCT/US2005/047000 (2005-12-01), None
Chang Margherita
Dubin Valery M.
Fang Ming
Huang Tzuen-Luh
Lee Kevin J.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Picardat Kevin M
LandOfFree
Method for constructing contact formations does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for constructing contact formations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for constructing contact formations will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4010326