Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-14
2005-06-14
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S638000, C438S643000, C438S653000, C257S406000, C257S408000, C257S411000
Reexamination Certificate
active
06905932
ABSTRACT:
A semiconductor device (100) and a method for constructing a semiconductor device (100) are disclosed. A trench isolation structure (112) and an active region (110) are formed proximate an outer surface of a semiconductor layer (108). An epitaxial layer (111) is deposited outwardly from the trench isolation structure (112). A first insulator layer (116) and a second insulator layer (118) are grown proximate to the epitaxial layer (111). A gate stack (123) that includes portions of the first insulator layer (116and the second insulator layer (118) is formed outwardly from the epitaxial layer (111). The gate stack (123) also includes a gate (122) with a narrow region (130) and a wide region (132) formed proximate the second insulator layer (118. The epitaxial layer (111) is heated to a temperature sufficient to allow for the epitaxial layer (111) to form a source/drain implant region (126) in the active region (110).
REFERENCES:
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5970352 (1999-10-01), Shiozawa et al.
Babcock Jeffrey
Howard Gregory E.
Pinto Angelo
Brady III W. James
McLarty Peter K.
Pham Long
Rao Shrinivas H.
Telecky , Jr. Frederick J.
LandOfFree
Method for constructing a metal oxide semiconductor field... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for constructing a metal oxide semiconductor field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for constructing a metal oxide semiconductor field... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3506726