Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2007-08-28
2007-08-28
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C324S693000
Reexamination Certificate
active
10830577
ABSTRACT:
A method for monitoring copper film quality and for evaluating the annealing efficiency of a copper annealing process includes measuring hardness of a copper film formed on a substrate before and after annealing and comparing the hardness measurement results. The measurements can be correlated to grain boundary saturation levels, copper grain sizes and therefore conductivity. Hardness measurements may be taken at a plurality of locations throughout the substrate to account for variations in the copper film grain structure.
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patent: 7019519 (2006-03-01), Le
patent: 2004/0180541 (2004-09-01), Joshi
Nestorovic, Svetlana, “Influence of Alloying and Secondary Annealing on Anneal Hardening Effect at Sintered Copper Alloys,” Bull. Mater. Sci., vol. 28, No. 5, Aug. 2005, pp. 401-403 Indian Academy of Sciences.
Cheng Hsi-Kuei
Cheng Min-Yuan
Fan Yuh-Da
Feng Hsien-Ping
Huang Huang-Yi
Duane Morris LLP
Smith Zandra V.
Taiwan Semiconductor Manufacturing Company
Thomas Toniae M.
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