Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1998-12-15
2000-07-18
Everhart, Caridad
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438624, 438782, H01L 21469
Patent
active
06090724&
ABSTRACT:
A method for composing a low dielectric thermally conductive thin film is disclosed. A layer of precursor material is first deposited on a silicon substrate. Without affecting its structure and porosity, the layer of silica precursor material is then dried and becomes a layer of porous silica film. Subsequently, the silicon substrate is exposed to a methane gas atmosphere at a temperature of approximately 200-350.degree. C., during which methane gas molecules are oxidized locally to liberate carbon atoms. Some of the liberated carbon atoms will bond to the interior of the porous silica film. The carbon atoms from the methane gas molecules then permeate the nanopores within the porous silica film such that the entire nanostructure of the porous silica film is carbidized. As a result, a composite porous silica film, which may serve as a dielectric layer within an interconnect structure, is formed.
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Miller Gayle W.
Shelton Gail D.
Everhart Caridad
LSI Logic Corporation
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