Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1986-10-08
1991-01-29
Dees, Jose G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430311, 430325, 430326, 430330, G03F 726, G03F 738
Patent
active
049882848
ABSTRACT:
A method to compensate for the E-beam proximity effect which includes a post exposure, pre-development baking of the photoresist layer. The baking of the photoresist layer causes a migration of small, photo-active compound (PAC) molecules to increase the size of peripheral exposed areas so as to compensate for the exposure size variations caused by the proximity effect.
REFERENCES:
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patent: 4931381 (1990-06-01), Spak et al.
Spak et al., "Mechanism and Lithographic Evaluation of Image Reversal in AZ5214 Photoresist", Conf. Proceedings: Polymers, Principles, Processing and Materials, American Chem. Soc., Allenville, N.Y., pp. 247-269, Oct. 28, 1985.
Broyde, "Exposure of Photoresist", J. Electrochemical Soc.: Solid State Science, vol. 117(12), Dec., 1970, pp. 1555-1556.
"Reduction of Photoresist Standing-Wave Effects by Post-Exposure Bake", by Edward John Walker; IEEE Transactions on Electron Devices; Jul., 1975; pp. 464-466.
"Monomer Redistribution in Dry-Developed X-Ray Resists", by Vladimir Starov; Varion Associates, Inc., J. Image Science, vol. 30(2), Mar.-Apr., 1986, pp. 74-79.
"Application of GHOST Proximity Effect Correction Method to Conventional and Nonswelling Negative E-Beam Resists"; Huy-yu Liu and E. D. Liu; SPIE vol. 632.
Electron-Beam, X-Ray & Ion-Beam Techniques for Submicrometer Lithographies V (1986); pp. 244-249.
"Proximity Effect Correction for Electron Beam Lithography by Equalization of Background Dose", by Geraint Owen and Paul Rissman; vol. 54, Jun., 1983; No. 6; American Institute of Physics; pp. 3573-3581.
"Proximity Effect Correction in Electron-Beam Lithography", by N. D. Wittels and C. I. Youngman; Sperry Research Center, Sudbury, Mass.; pp. 361-367.
"Corrections to Proximity Effects in Electron Beam Lithography", by Mihir Parikh; J. Appl. Phys. 50(6), Jun., 1979, 0021-8979/79/064371 071; 1979 Am. Inst. of Physics; pp. 4371-4377.
Liu En-Den D.
Liu Hua-yu
Dees Jos,e G.
Hewlett--Packard Company
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