Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-09-05
1999-04-06
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
257390, H01L 2122
Patent
active
058917810
ABSTRACT:
A method for coding a mask read-only memory (ROM) implants impurity ions into a semiconductor substrate so as to form a first impurity region, and forms a plurality of gate electrodes on the semiconductor substrate. Next, sidewalls on both sides of each of the gate electrodes are formed, and source and drain impurity regions are formed in the semiconductor substrate at respective sides of each of the gate electrodes. Then a mask over the semiconductor substrate, which exposes at least one of the gate electrodes and which exposes the source and drain impurity regions associated with the exposed gate electrode, is formed, and code ions are implanted into the semiconductor substrate. The semiconductor substrate is also annealed so that the source and drain impurity regions associated with the exposed gate electrode electrically contact the first impurity region.
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Chaudhuri Olik
Coleman William David
LG Semicon Co. Ltd.
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