Method for CMP removal rate compensation

Details Method for CMP removal rate compensation Method for CMP removal rate compensation

2006-07-04

2006-07-04

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S693000

Reexamination Certificate

active

07071106

ABSTRACT:
A method for polishing a material layer on a semiconductor wafer to a desired target layer thickness. The method includes calculating a compensated removal rate based on the thickness of material to be removed from a material layer on the wafer according to a standard value; the current material removal rate of the CMP apparatus; and the offset thickness, which equals the difference between the thickness of the material layer which would be attained using the current material removal rate and the target thickness for the material layer. The calculated compensated removal rate is then programmed into the controller for the CMP apparatus, which polishes the material layer at the calculated compensated removal rate to achieve the desired target layer thickness for the layer.

REFERENCES:
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6848970 (2005-02-01), Manens et al.
patent: 2002/0068450 (2002-06-01), Halley
patent: 2003/0190864 (2003-10-01), Lehman et al.
patent: 2004/0192049 (2004-09-01), Ohno et al.

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