Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2007-12-25
2007-12-25
Barr, Michael (Department: 1746)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S022100, C134S026000, C216S067000, C216S074000, C438S905000
Reexamination Certificate
active
10606512
ABSTRACT:
A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.
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Hong Jin-Gi
Kim Jung-wook
Lee Eung-Joon
Lee Hyeon-Deok
Park Ji-Soon
Barr Michael
Chaudhry Saeed
F. Chau & Associates LLC.
Samsung Electronics Co,. Ltd.
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