Method for cleaning a processing chamber and method for...

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Reexamination Certificate

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C134S022100, C134S026000, C216S067000, C216S074000, C438S905000

Reexamination Certificate

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10606512

ABSTRACT:
A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.

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patent: 6861356 (2005-03-01), Matsuse et al.
patent: 6992011 (2006-01-01), Nemoto et al.

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