Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-27
2005-12-27
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S686000, C438S597000, C438S652000
Reexamination Certificate
active
06979647
ABSTRACT:
A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer (104) on the bonding pad; depositing a metal layer (301, 302, and303) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution (501) to remove the portion of the seed layer not covered by the metal layer. The etchant solution contains a chelating agent that bonds ions from the seed layer. When the seed layer is copper or a refractory metal, and the metal layer is gold or palladium, the preferred chelating agent is selected from, but is not limited to, but is not limited to, the families of ethylenediaminetetraacetic acids (EDTA), 8-hydroxy-quinolines, including 8-hydroxy-quinoline-5-sulfonic acid, porphyrins, and phthalocyanines.
REFERENCES:
patent: 2003/0006062 (2003-01-01), Stone et al.
Arbuthnot Diane L.
Bojkov Christo P.
Kunesh Robert F.
Brady, II Wade James
Smith Bradley K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
LandOfFree
Method for chemical etch control of noble metals in the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for chemical etch control of noble metals in the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for chemical etch control of noble metals in the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3489145