Method for changing threshold voltage of device in resist asher

Details Method for changing threshold voltage of device in resist asher Method for changing threshold voltage of device in resist asher

2007-08-14

2007-08-14

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S689000, C257SE21703, C257SE21122

Reexamination Certificate

active

11136131

ABSTRACT:
A method for forming a dopant in a substrate, by accumulating at least one dopant species in an asher chamber and forming the accumulated dopant species on an exposed portion of the substrate. A target concentration for the plasma chamber dopant species is determined by test or measurement. The asher is used to form the dopant species on the substrate, and the dopant species is driven into the substrate. A threshold voltage is measured on the substrate to verify or confirm that a proper dopant level has been achieved.

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