Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-01-02
2008-12-09
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185250, C365S189150, C365S204000, C365S233170, C365S233180
Reexamination Certificate
active
07463539
ABSTRACT:
A memory device operates according to a method for reading includes pre-charging a first set of selected bit lines to a pre-charge voltage and sensing data from the cells coupled to the first set of selected bit lines. Then, residual charge is transferred from the first set of selected bit lines to corresponding members of a second set of selected bit lines. The second set of selected bit lines, having an initial charge transferred from the first set, is then pre-charged to the pre-charge voltage. The data from the cells coupled to the second set of selected bit lines it is then sensed. In embodiments described herein, the read operation occurs in a burst read mode, where a volume of data having consecutive addresses is read.
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Haynes Beffel & Wolfeld LLP
Hidalgo Fernando N
Macronix International Co. Ltd.
Zarabian Amir
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