Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-02-08
2005-02-08
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S680000
Reexamination Certificate
active
06852635
ABSTRACT:
Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.
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Elers Kai-Erik
Haukka Suvi P.
Maex Karen
Saanila Ville Antero
Satta Alessandra
ASM International NV
Interuniversitair Nizroelecmica
Knobbe Martens Olson & Bear LLP
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